|
2198 |
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| Optically coupled infrared emitting diodes and phototransistors in dual-in-line packages. Single type is in a 6-pin DIL package, dual type is in an 8-pin DIL package and quad type is in a 16-pin DIL package. |
| On the single type, a base lead is provided so that the device may be biased in the conventional manner. |
| Input to output voltage: |
1500V |
| Collector-base voltage (VCBO):70V |
| Collector-emitter voltage |
| Emitter-base voltage (VEBO): |
7V |
| Input diode reverse voltage: |
3V |
| Continuous power dissipation: |
| Electrical characteristics (typical): |
| Input diode static reverse current |
| On state collector current |
| Phototransistor operation (IB = 0): |
7mA |
| Photodiode operation (IE = 0): |
20╡A |
| Off-state collector current |
| Phototransistor operation (IB = 0): |
1nA |
| Photodiode operation (IE = 0): |
0.1nA |
| hFE (VCE = 5V, IC = 10mA, IF = 0): |
300 |
| Input diode VFat IF = 16mA: |
1.2V |
| Collector-emitter saturation voltage |
| (IC = 2mA, IF = 16mA, IB = 0): |
0.25V |
| Input to output resistance (diode leads |
| shorted to transistor leads shorted at |
| Vin to Vout = 1.5kV): |
1011~@ |
| Input to output capacitance: |
1pF |
| phototransistor operation: |
>125kHz |
| photodiode operation: |
>250kHz |
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